General A-Z

Specifications of OFET and LOFET Standard Substrates

The current standard for OFET and LOFET transistors is the OFET/LOFET Spectra. The Spectra is determined from measurements performed on test chips. These chips are made from low-density silicon oxide (LDSI). They consist of five bottom-contact/bottom-gate transistors, each with a 30 mm channel length and a 1 mm width. These semiconductors have gold/chrome electrodes in the active area and an aluminum/chrome electrode on the contact pad. The test chips are made from a highly p-doped silicon wafer. The substrate is coated with 100 nm SiO2 on both sides, providing a gate and dielectric for the semiconductor.

High-Voltage & Low-Voltage Devices

TOFET standard substrates are made of organic materials that are chemically inert. They are compatible with both high-voltage and low-voltage devices. They are available in various shapes, sizes, and wattage configurations. Of all semiconductors, OFETs are the most widely used. For most applications, they are the best choice for power electronics. They are so versatile and easy to use that they can be used to make almost any type of electronic device.

The transfer curve of the OFET is recorded in the linear regime. This is a logarithmic plot. The red line is the linear t that extends along the entire curve. The constant charge carrier mobility is g=0, which represents the L2 description. The mobility of charge carriers is a function of the gate-source voltage. Increasing the gate electrode overlap increases the value.

Physical Characteristics of Semiconductors

The OFET standard also covers the physical characteristics of semiconductors. Typical examples of the conductive properties of an OFET include its resistance to temperature, its reversibility, and current conductivity. They are typically low-voltage devices, but they can be high-voltage as well. The transfer curve is characterized by the charge carrier mobility (Q), proportional to the gate-source voltage.

TIPS-pentacene has been used in OFETs for several years. It is a dark blue solid that is dispersed in decane and anisole. It is easily dissolved in a variety of solutions. If it is not available, it is possible to use other organic semiconductors. However, in the meantime, the TIPS-pentacene is a better option for OFETs.

Logarithmic & Linear Regime

The transfer curves of OFETs are recorded in a logarithmic and linear regime. In the linear power, the short green line represents the linear t in VGS between -50 and -40 V. The red curve shows the parameters of the OFET. The LOFET is an organic semiconductor with a top-gate geometry. Its characteristic of the transistors makes it more efficient and versatile.

The VOFET transfer curve was determined in a linear regime. It is recorded in a logarithmic control. The authors of the papers evaluated the OFET transfer curves. In addition, several types of research were conducted on organic semiconductors. The results were published in the Proceedings of the 2008 Materials Research Society. These studies focused on the electrical parameters and the underlying theory.

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Electrical Parameters of OFETs

Murgia and F. Todescato studied the OFET transfer curves. Murgia and H. Thiem studied the LOFETs. They investigated the electrical parameters of the OFETs. The AOFTAs were made by combining amorphous semiconductors. The AOFATs were first synthesized in the early 1960s.

The OFET and LOFET Standard Substances are made of two different types of materials. For example, TIPS-pentacene is a dark blue solid and can be dissolved in solvents like anisole and decane. It is best suited for low-voltage, high-voltage, and thick-voltage applications. In addition, the TIPS-pentacene is also a solution-processable field-effect semiconductor.

Final Words:

OfET and LOFET semiconductors differ in charge carrier mobility. Higher regio-regularity does not necessarily translate to better performance. The higher the RMS value, the greater the charge carrier mobility. This combination of high-voltage and low-voltage devices is highly selective. The regio-regularity of the transistors determines the maximum operating frequency.

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